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Fujitsu Compound Semiconductor, Inc.
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FCSI Press Releases
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FCSI
Announces an Agreement between
Lucent Technology and Fujitsu Quantum Devices Limited
For Common Designs of
10Gbps and 2.5Gbps Gigabit Detector Devices
For Optical Communications.
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA announces a joint agreement between FUJITSU QUANTUM DEVICES LIMITED (FQD) and LUCENT TECHNOLOGIES, MICROELECTRONICS GROUP (Lucent) to produce a common design for detector devices used in receiver systems for gigabit rate optical communications.
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FCSI names Kruvand Associates, Inc., Sales Representatives
for Arkansas, Louisiana, Oklahoma and most of Texas
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA further expanded its sales
representative coverage by naming Kruvand Associates, Inc. of
Richardson, Texas to sell Fujitsu’s Microwave, Lightwave and GaAs IC
DataComm products. The FCSI territory represented by
Kruvand Associates, Inc. includes the states of Arkansas, Louisiana,
Oklahoma and part of Texas, excluding El Paso County.
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FCSI Names Three New Sales Representative Companies
for Illinois, Iowa, Kansas, Missouri, Nebraska, Indiana,
Kentucky, Ohio and Wisconsin
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA announces the signing of sales representative agreements with three wireless and fiber sales representative organizations. These three companies will represent FCSI for RF, Laser and GaAs IC sales.
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FCSI Announces
New Millimeter Wave Power Amplifier MMICs for LMDS Service
FMM5802X (27dBm @ 26GHz-32GHz) &
FMM5804X (20dBg @ 15GHz-32GHz
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA announces two new mmWave (Millimeter Wave) GaAs MMIC Power Amplifiers for LMDS (Local Multipoint Distribution Service). These gain blocks are targeted for base station and CPE (Customer Premises Equipment) applications. In addition to the LMDS frequencies (27GHz - 31.5GHz) the FMM5804X is usable over the full range of two-way radio links in the 15GHz to 32GHz spectrum. To ensure maximum performance, both parts are shipped as unpackaged die meeting guaranteed RF specifications.
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FCSI Announces
Advanced Technology Internally Matched GaAs Power FETs
for 3GHz to 15GHz Radio Links and Base Stations
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA announces a broad new product line of 50 Ohm Internally Matched GaAs Power FETs (IM-FETs) using Enhanced Performance Power FET technology. Over forty (>40) new "FLM-F Series" part numbers are available with a frequency ranges from 3-GHz to over 15-GHz, specifically tuned for "L, C, S, X and Ku" Radio-Link and base station frequency bands. They are manufactured in P1dB (Power at 1dB compression) power levels from <1 watt (30dBm) to over 35 watts (>45dBm), with IM3 better than -44dBc measured at 10dB below P1dB levels. Minimum guaranteed G1dB Gain ranges from 9.0dB for frequencies under 6GHz to 5dB at 15GHz.
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FCSI Names Odyssey 1, Sales Representative Company
for Colorado, Utah, Wyoming, Eastern Montana, Southern and Eastern Idaho
FUJITSU COMPOUND SEMICONDUCTOR, Inc. (FCSI) of San Jose, CA announces a
sales representative agreement with Odyssey 1 of Englewood, Colorado, a leading sales
representative of RF and Microwave electronic components, to sell Fujitsu microwave and laser
component products. The FCSI territory represented by Odyssey 1 includes the entire states of
Colorado, Utah and Wyoming, Southern and Eastern Idaho, and Eastern Montana.
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FCSI Press Release Archive
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