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Fujitsu Compound Semiconductor, Inc.
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FCSI History
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* Glossary
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Fujitsu Limited ("Fujitsu")
began mass production of discrete semiconductor devices in 1959. In 1973, Fujitsu developed the world's first GaAs-FET*, a compound semiconductor, which was applied in a microwave radio link system in 1976.
Mass production of GaAs-FETs began at Fujitsu's Aizu factory in 1977. At this
time, Fujitsu started to mainly concentrate on the development and manufacturing of compound semiconductors.
In 1979, Fujitsu introduced the first commercially available low-noise germanium avalanche photodiodes and long wavelength laser diodes with single-mode operation.
Fujitsu Quantum Devices, Ltd. ("FQD")
was established as a wholly-owned subsidiary of Fujitsu in 1984
to specialize in the manufacture of compound semiconductors.
In 1991, the world's largest GaAs wafer fabrication facility was
completed at FQD in Yamanashi Prefecture, Japan.
Fujitsu has developed and supplied many
leading-edge GaAs products. HEMTs*, invented by Fujitsu in 1980, enabled the creation of direct broadcasting satellite systems which use small parabolic dishes for an antenna.
In 1987, Fujitsu introduced the most advanced In GaAs avalanche photodiodes and InGaAsP distributed feed-back lasers in the fiber-optic market. In 1992, Fujitsu introduced the first commercially available distributed feed-back laser with an integrated electro-absorption modulator which dramatically increased the link lengths achievable from 2.5 Gb/s systems.
Fujitsu GaAs MMICs* are widely used in cellular phones. Super-high reliability laser diodes* are employed in submarine cable systems and high bit rate digital communication systems and Fujitsu GaAs LSIs are used in the world's fastest supercomputers.
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